中国科大学位与研究生教育
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主讲教师:Yongning Tang 人气:3779 更新时间: 2015年05月18日
  ABSTRACT:Comparedtotraditionalnetworks,SDNemploystwoimportantsimplificationsthatmakeiteligibleforanothernewdimensionofnetworktroubleshooting:formalverification.First,SDNrelocatescontrolfromdistributedalgorithmsrunningonindividualdevicestoalogicallycentralizedcontroller.Second,SDNreplacesvariousheterogeneousdevices(e.g.,switches,routers,loadbalancers,firewalls)usedintraditionalnetworkswithcommodityprogrammableSDNswitchesthatprovideastandardsetoffeatures.Together,thesesimplificationsimplythatthebehaviorofthenetworkisdeterminedbythesequenceofconfigurationinstructionsissuedbythecontroller.Hence,networkoperatorscanreasonaboutthestatesofSDNswitchestoverifywhetherornotthenetworkhassomeproperty(e.g.,loopfree,correctaccesscontrol).Inthenetworkingcommunity,thereisburgeoninginterestintoolsthatchecknetwork-widepropertiesautomatically. Inthistalk,IwillstartfromatraditionalfaultdiagnosistechniquebasedonBayesianbeliefnetwork,andthenmovetotwodimensionsofnetworktroubleshootinginthecontextofSDN:causalitybasedfaultdiagnosisandformalmethodbasednetworkverifications.Severalrecentlydevelopedsolutionsinthenetworkingcommunity,suchasMinimalCausalSequence(MCS),FlowChecker,HeaderSpaceAnalysis(HSA),VeriFlow,willbepresentedascasestudies.Finally,Iwillwrapupmytalkwithbriefdiscussionofmyrecentresearchintherelatedfield.
主讲教师:刘发林 人气:16482 更新时间: 2015年03月22日
Selected Texts in Scientific and Technological English.
主讲教师:陈雪锦 人气:38702 更新时间: 2015年03月22日
图像理解(Image understanding) 包含物体检测、识别、关系建模等过程,从而对整个图像所包含的场景及物体进行语义描述。其作为计算机视觉的核心问题,具有广阔的应用前景和极高的研究价值。本课程主要介绍图像理解的基本理论方法以及最新进展。课程共分5个部分。第一部分,介绍图像基本特征的提取和描述,包括边缘、角点、斑点,以及SIFT等其它描述子;第二部分,介绍目标识别的基本方法和原理,包括Alignment voting, Bag-of-word
主讲教师:Jason woo 人气:18241 更新时间: 2014年11月30日
Chap1.ShortChannelCMOSDevices(6hs)1.1SummaryofLongChannelCMOSDeviceCharacteristics.1.1.1D.CI-VCharacteristics.1.1.2CMOSVoltageGainStage.1.1.3WeakInversion(Subthreshold)Characteristics.1.2CMOSDeviceScalingandITRSRoadMap.1.3Shortchanneleffects(SCE).1.3.1ReductionofVthinShortChannelMOSFET.1.3.2Drain-InducedBarrierLowering(DIBL),1.3.3ChannelLengthDependenceofVth.1.3.4VelocitySaturationandShortChannelDeviceI-Vcharacteristics.1.4MOSDeviceDesign.1.4.1MOSFETScalingConstantFieldScalingschemeGeneralizedScalingscheme1.4.2Non-uniformDopingandRetrogradeWellDoping1.4.3Shallows/dJunctions,s/dExtension,andRaiseds/d1.5CMOSDevicesinBallisticTransportLimit1.5.1BallisticTransportLimit1.5.2Quasi-BallisticTransportandBack-ScatteringCoefficient1.5.3VelocityOvershootinShortChannelDevices1.6SummaryofI-VCharacteristicsofCMOSTransistorsChap2.NewPhysicalEffects(3hs)2.1AugerRecombinationandImpactIonization.2.2CarrierQuantizationinaQuantumWell.2.2.1CarrierQuantization.2.2.2DensityofStatesinQuantumWell.2.2.3TheImpactofCarrierQuantizationinMOSDeviceCharacteristics.2.3QuantumTunnelingthroughaPotentialBarrier.2.3.1ElectronTunnelingthroughanElectronBarrier.2.3.2HoleTunnelingthroughaHoleBarrier.2.3.3ElectronTunnelingfromaTrapintheOxideGaptotheConductionBand.2.3.4Band-to-BandTunneling.2.3.5Gate-Induced-Drain-Leakage(GIDL)inMOSFETs.2.4GateTunnelingCurrentFowler-Nordheim(FN)andDirectTunneling(DT),ElectronTunnelingandHoleTunneling,CarrierSeparationMeasurements.ThroughChannelandthroughs/dTunneling,DifferentTunnelingCurrentComponentsinnandpMOSFETs.AnalyticalExpressionsforFNandDTtunnelingcurrents.Chap3.ReliabilityandDeviceLifetime(3hs)3.6NewReliabilityIssuesfor100orsub100nmTechnologyNodeCMOSDevicesChap4.NewMaterials(4hs)4.1High-kdielectrics4.1.1GatedielectricsEquivalentoxidethickness(EOT)4.1.2MIMcapacitors.4.1.3Requirementsforhigh-kdielectricmaterials4.1.4PotentialhighkandmiddlekDielectricMaterials4.1.5.Tunnelingcurrentthroughmiddlekdielectricstacks:oxynitridestacks.4.1.6Tunnelingcurrentthroughhighkdielectricstacks:HfO2and(HfO2)x(Al2O3)1-xgatestacksandthescalabilityoffutureMOSFETs.4.2Metalgatematerials4.2.1Introduction4.2.2Requirementsformetalgatematerials.4.2.3Workfunctionsforpotentialmetalgatematerials.4.2.4MetalAlloyandDualworkfunctionmetalgates4.3Newchannelmaterials4.3.1Introduction4.3.2SiGelayerandStrainedSilayerCriticalthicknessofpseudomorphiclayerSi1-xGexepigrownonSisubstrateStrainedSiepigrownonrelaxedSi1-xGex/Si.StrainedGeepigrownonrelaxedSi1-xGex/Si4.3.3PhysicalanalysisofmobilityenhancementBulksemiconductorelectronandholeeffectivemassAlloyscatteringStressinducedenergybandchangeDifferentscatteringmechanism.Whatkindofstrainisgood.Process-inducedlocalstraininthechannelregion.4.3.4Bi-axialstrainanduniaxialstrain,processinducedlocalstrain3.1IntroductionFowler-Nordheim(FN)Stress;HotCarrier(HC)stress;NegativeBiasTemperatureInstability(NBTI).3.2InterfaceTrapsandOxideTrapsInterfacetraps,chargecontributionfrominterfacetraps,oxidetrapsandoxidecharge.3.3InterfacetrapMeasurements3.3.1C-Vmethods3.3.2Charge-Pumping(CP)method3.3.3Direct-CurrentCurrent-Voltage(DCIV)method.3.4VariationofDeviceParametersunderStressesandDeviceLifetime.VariationofVthunderFNstressandNBTI.DynamicNBTI.VariationofVthunderHCstress(Hotcarrierdegradation).WorstHCdegradationcondition.VariationofgmunderFNorHCstressVariationofotherdeviceparametersunderstress(Rs/d,Cg-s/d,GIDL)3.5OxideDegradationandOxideReliability3.5.1Oxidebreakdown(BD)andQuasi-Breakdown(QB)(SoftBreakdown),QBDandTBD3.5.2CumulativeDistributionFunctionandWeibullPlot3.5.3StressInducedLeakageCurrent(SILC)
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Aranda Pino
Profesor of Department of Algebra, Geometry and Topology Science Faculty, University of Málaga, Spain. Research Interests: Leavitt path
Nikos Hadjichristidis
Prof. Nikos Hadjichristidis, Department of Chemistry, University of Athens.
蔡荣根
中国科学院理论物理所研究员,博士生导师。中国引力和相对论天体物理学会副理事长(2008-) 中国科学技术大学交叉学科理论研究中心兼职教授
欧阳钟灿
欧阳钟灿,中国科学院院士。1968年清华大学自控系毕业,1981年清华大学物理系固体物理专业获硕士学位,1984年获光学专业理学博士学位。1985-1986年在理论物理所
Manuela M. Veloso
Manuela M. Veloso教授是国际人工智能和自主机器人领域的主要学界领导人和学术带头人之一,取得了一系列杰出成就,其中部分成果产生了深远的影响。
庄小威
庄小威,华裔美籍生物物理学家,美国国家科学院院士, 哈佛大学化学与化学生物、物理学教授,创办有庄小威实验室。
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